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McGuigan, B. C. ; Chang, A. S. ; Greenhill, C. ; Johnson, H. T. ; Goldman, R. S. ( , Journal of Applied Physics)
We investigate the influence of strain and dislocations on band alignment in GaSb/GaAs quantum dot systems. Composition profiles from cross-sectional scanning tunneling microscopy images are interpolated onto a finite element mesh in order to calculate the distribution of local elastic strain, which is converted to a spatially varying band alignment using deformation potential theory. Our calculations predict that dislocation-induced strain relaxation and charging lead to significant local variations in band alignment. Furthermore, misfit strain induces a transition from a nested (type I) to a staggered (type II) band alignment. Although dislocation-induced strain relaxation prevents the type I to type II transition, electrostatic charging at dislocations induces the staggered band alignment once again.
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Chang, A. S. ; Walrath, J. C. ; Frost, T. ; Greenhill, C. ; Occena, J. ; Hazari, A. ; Bhattacharya, P. ; Goldman, R. S. ( , Applied Physics Letters)
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Chang, A. S. ; Zech, E. S. ; Kim, T. W. ; Lin, Y. H. ; Mawst, L. J. ; Goldman, R. S. ( , Applied Physics Letters)
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Liu, Wei ; Chi, Hang ; Walrath, J. C. ; Chang, A. S. ; Stoica, Vladimir A. ; Endicott, Lynn ; Tang, Xinfeng ; Goldman, R. S. ; Uher, Ctirad ( , Applied Physics Letters)